Infra-red transmitting optical components and optical coatings therefor

Infrared transmitting optical components having a wide variety of substrates (e.g. ZnS, ZnSe, Ge, Si, SiO2) are disclosed all with an optical coating of boron phosphide (BP). The boron phosphide may be a single layer coating or one layer of a multilayer coating in which case it is preferably the pen...

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Bibliographische Detailangaben
Hauptverfasser:	LEWIS, KEITH L, KELLY, CHRISTOPHER J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Infrared transmitting optical components having a wide variety of substrates (e.g. ZnS, ZnSe, Ge, Si, SiO2) are disclosed all with an optical coating of boron phosphide (BP). The boron phosphide may be a single layer coating or one layer of a multilayer coating in which case it is preferably the penultimate layer. Coated components are provided which are very low in absorption, which are operable at high temperatures with minimal transmission loss, and which are transmitting in two IR wavebands. The boron phosphide layer is deposited by plasma-assisted chemical vapor deposition at a temperature in the range 300 DEG -500 DEG C. preferably using feedstock gases which are hydrogen-fee. Boron phosphide coatings of up to 40 mu m in thickness have been achieved.