Schottky barrier height for metal contacts to III-V semiconductor compounds

Schottky barrier height for metal contacts to III-V semiconductor compounds

A metal to semiconductor contact is provided wherein the Schottky barrier height is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GRANT, RONALD W, WALDROP, JAMES R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A metal to semiconductor contact is provided wherein the Schottky barrier height is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on gallium arsenide.