Method of forming conductive layer including removal of native oxide

A method of forming a conductive layr includes the steps of performing dry etching of a surface of a substrate in a first chamber maintained in a nonoxidizing atmosphere to remove a natural oxide from the surface of the substrate, transferring the substrate from the first chamber to a second chamber...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NARITA, TOMONORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of forming a conductive layr includes the steps of performing dry etching of a surface of a substrate in a first chamber maintained in a nonoxidizing atmosphere to remove a natural oxide from the surface of the substrate, transferring the substrate from the first chamber to a second chamber while the nonoxidizing atmosphere is maintained, and forming a refractory metal film on the surface of the substrate by low-pressure CVD in the second chamber.