Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
In a depletion mode thyristor of the type including a regenerative portion (32,34,36,38) and a non-regenerative portion (32,34,34a,36a), the turn-off time for the thyristor is substantially reduced without producing a corresponding increase in the on-resistance of the device by providing a region of...
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| Zusammenfassung: | In a depletion mode thyristor of the type including a regenerative portion (32,34,36,38) and a non-regenerative portion (32,34,34a,36a), the turn-off time for the thyristor is substantially reduced without producing a corresponding increase in the on-resistance of the device by providing a region of relatively low carrier lifetime (34a) in the non-regenerative portion of the device in the layer (34) or layers in which charge storage limits the turn-off time for the device. Turn-off of the thyristor is accomplished by pinching off the regenerative portion, thereby diverting current into the low carrier lifetime non-regenerative portion. |
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