High-power GTO thyristor and also a method for its manufacture

High-power GTO thyristor and also a method for its manufacture

In a high-power GTO thyristor with anode short-circuits (7) in the anode-side p-type emitter layer (6), the triggering sensitivity is improved by an additional thin and lightly doped p--type barrier layer (9) between the anode short-circuits (7) and the n-type base layer (5) without the turn-off pro...

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Bibliographische Detailangaben
Hauptverfasser: ROGGWILLER, PETER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In a high-power GTO thyristor with anode short-circuits (7) in the anode-side p-type emitter layer (6), the triggering sensitivity is improved by an additional thin and lightly doped p--type barrier layer (9) between the anode short-circuits (7) and the n-type base layer (5) without the turn-off process being negatively affected.