Epitaxial wafer

An epitaxial wafer comprises a single crystalline substrate (1), a p type gallium aluminum arsenide mixed crystalline layer (2) and an n type gallium aluminum arsenide mixed crystalline layer (6) having an indirect transition type band structure. The p type gallium aluminum arsenide mixed crystallin...

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Bibliographische Detailangaben
Hauptverfasser:	SATO, TADASHIGE, KOBASHI, YASUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ENGINE PLANTS IN GENERAL GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNALCOMBUSTION ENGINES GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES ORENGINES IN GENERAL HEATING LIGHTING MACHINES OR ENGINES IN GENERAL MECHANICAL ENGINEERING SEMICONDUCTOR DEVICES STEAM ENGINES WEAPONS
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Beschreibung
Zusammenfassung:	An epitaxial wafer comprises a single crystalline substrate (1), a p type gallium aluminum arsenide mixed crystalline layer (2) and an n type gallium aluminum arsenide mixed crystalline layer (6) having an indirect transition type band structure. The p type gallium aluminum arsenide mixed crystalline layer (2) consists of a gallium aluminum arsenide mixed crystalline layer (4) having a direct transition type band structure extending about 3 to 10 mu m from the pn junction (5) and a gallium aluminum arsenide mixed crystalline layer (3) having an indirect transition type band structure. The aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide layer (2) exponentially and gradually changes in the region between the direct transition type layer and the indirect transition type layer.