Processing apparatus and method

A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.

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Bibliographische Detailangaben
Hauptverfasser:	FREEMAN, DEAN W, LOWENSTEIN, LEE M, DAVIS, CECIL J, BURRIS, JAMES B
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.