Method of fabrication of isolated islands for complementary bipolar devices

A process includes selectively forming laterally adjacent complementary doped epitaxial layers over low resistive buried regions of a horizontally isolated substrate. Self-aligned oxide mask are used for the epitaxial deposition. Lateral dielectric isolation trenches at the complementary doped epita...

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Hauptverfasser:	BAJOR, GEORGE, NICOLAY, HUGH C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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