Method of fabrication of isolated islands for complementary bipolar devices
A process includes selectively forming laterally adjacent complementary doped epitaxial layers over low resistive buried regions of a horizontally isolated substrate. Self-aligned oxide mask are used for the epitaxial deposition. Lateral dielectric isolation trenches at the complementary doped epita...
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| Zusammenfassung: | A process includes selectively forming laterally adjacent complementary doped epitaxial layers over low resistive buried regions of a horizontally isolated substrate. Self-aligned oxide mask are used for the epitaxial deposition. Lateral dielectric isolation trenches at the complementary doped epitaxial boundary complete the isolation of the islands. Base and emitter regions are formed in the epitaxial collector layers. |
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