Method of fabrication of isolated islands for complementary bipolar devices

A process includes selectively forming laterally adjacent complementary doped epitaxial layers over low resistive buried regions of a horizontally isolated substrate. Self-aligned oxide mask are used for the epitaxial deposition. Lateral dielectric isolation trenches at the complementary doped epita...

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Hauptverfasser:	BAJOR, GEORGE, NICOLAY, HUGH C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	BAJOR GEORGE NICOLAY HUGH C
description	A process includes selectively forming laterally adjacent complementary doped epitaxial layers over low resistive buried regions of a horizontally isolated substrate. Self-aligned oxide mask are used for the epitaxial deposition. Lateral dielectric isolation trenches at the complementary doped epitaxial boundary complete the isolation of the islands. Base and emitter regions are formed in the epitaxial collector layers.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Method of fabrication of isolated islands for complementary bipolar devices
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