Method and device for reducing the water content in piezoelectric GAPO4 crystal elements and so produced crystal elements

In order to reduce the water content in piezoelectric GaPO4 crystal elements the proposal is put forward that each GaPO4 crystal element should be cut in its entirety from one uniform growth zone of a GaPO4 raw crystal bar and should not contain any zone boundaries, and that the piezoelectric GaPO4...

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Bibliographische Detailangaben
Hauptverfasser:	POSCH, UWE, KREMPL, PETER W, LIST, HELMUT, NITSCH, ALFRED, ENGEL, GUENTER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEPARATION SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	In order to reduce the water content in piezoelectric GaPO4 crystal elements the proposal is put forward that each GaPO4 crystal element should be cut in its entirety from one uniform growth zone of a GaPO4 raw crystal bar and should not contain any zone boundaries, and that the piezoelectric GaPO4 crystal elements should be treated with a dehydrating solution, until an infrared coefficient of alpha