Semiconductor component

In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.

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Bibliographische Detailangaben
Hauptverfasser: BROSTROEM, DORIS, RYMAN, LENNART
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.