Doped titanate glass-ceramic for grain boundary barrier layer capacitors

A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 mu m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 mu m thick wherein the conductivity of the grain...

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Bibliographische Detailangaben
Hauptverfasser: CHANCE, DUDLEY A, HU, YUNG-HAW
Format: Patent
Sprache:eng
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Zusammenfassung:A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 mu m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 mu m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol% of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.