Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure

In a process for preparing an infrared sentitive photodiode comprising the steps of: (1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consissting of PbSe, PbTe, PbSexTe1-x, PbySn1-ySe, PbySn1-yTe, PbySn1-ySexTe1-x, PbzCd1-zSe, PbzCd1-zTe,...

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Bibliographische Detailangaben
Hauptverfasser:	CHU, TAK-KIN, SANTIAGO, FRANCISCO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	In a process for preparing an infrared sentitive photodiode comprising the steps of: (1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consissting of PbSe, PbTe, PbSexTe1-x, PbySn1-ySe, PbySn1-yTe, PbySn1-ySexTe1-x, PbzCd1-zSe, PbzCd1-zTe, and PbzCd1-xSexTe1-x, wherein 0