Method of making a semiconductor transducer

A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially parallel...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KOWALSKI, CARL R, ALLEN, HENRY V, KNUTTI, JAMES W, PETERSEN, KURT E
Format:	Patent
Sprache:	eng
Schlagworte:	GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TESTING
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Beschreibung
Zusammenfassung:	A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially parallel to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer and are formed by sawing edge portions of said semiconductor layer. The substrate includes structures (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.