Process for producing a silicon carbide

A process for producing silicon carbide in the form of uniform fine particles and having a high purity with a good efficiency is provided, which process comprises subjecting an organosilicon compound expressed by the formula; R1 SiR23 wherein R1 represents a radial selected from the group consisting of saturated aliphatic hydrocarbon radicals, unsaturated aliphatic hydrocarbon radicals and aromatic hydrocarbon radicals and R2 represents chlorine atom or OR3 group wherein R3 represents an alkyl group of 1 to 4 carbon atoms to hydrolysis to obtain a hydrolyzate of said organosilicon compound having fluidity at normal temperatures, followed by calcining the hydrolyzate in an inert gas atmosphere.