Reference potential generating circuit

Reference potential generating circuit

A reference potential generating circuit according to this invention includes a first insulated gate field effect transistor (Q8) of an enhancement type, a second insulated gate field effect transistor (Q1) of a depletion type and a voltage dividing circuit (11). The source of the first insulated ga...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOINUMA, HIROYUKI, SUZUKI, KIMINOBU, KIRYU, MASAKAZU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CONTROLLING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Beschreibung
Zusammenfassung:A reference potential generating circuit according to this invention includes a first insulated gate field effect transistor (Q8) of an enhancement type, a second insulated gate field effect transistor (Q1) of a depletion type and a voltage dividing circuit (11). The source of the first insulated gate field effect transistor (Q8) is connected to the ground terminal (VSS), and the drain and gate thereof are connected to one another. The drain of the second insulated gate field effect transistor (Q1) is connected to the power source (VDD) and the gate thereof is connected to a connection node which connects the drain and gate of the first insulated gate field effect transistor (Q8). The voltage dividing circuit (11) is connected between the drain of the first insulated gate field effect transistor (Q8) and the source of the second insulated gate field effect transistor (Q1).