Method of forming a photoresist pattern

A method of forming a photoresist pattern wherein a photoresist coating film of naphthoquinone diazide sulfonate of novolak is formed on a substrate layer, the photoresist coating film is exposed by selectively irradiating with near ultraviolet radiation of 350 to 450 nm through a photomask, and the...

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Bibliographische Detailangaben
Hauptverfasser:	KAWAZU, RYUJI, KOBAYASHI, KENJI, YAMASHITA, YOSHIO, ITOH, TOSHIO, ASANO, TAKATERU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A method of forming a photoresist pattern wherein a photoresist coating film of naphthoquinone diazide sulfonate of novolak is formed on a substrate layer, the photoresist coating film is exposed by selectively irradiating with near ultraviolet radiation of 350 to 450 nm through a photomask, and the exposed photoresist coating film is developed with an either a negative type or positive type developing solution. The resultant photoresist pattern is usable for manufacturing a highly integrated circuit such as LSI which requires fine processing techniques.