Semiconductor device fabrication including a non-destructive method for examining lithographically defined features

A non-destructive double exposure method of examining photoresist features in section by, e.g., scanning electron microscopy, is described. The resist is exposed twice with one exposure defining integrated circuit features (5, 7, 9) and the other exposure defining an edge type feature (11) which ove...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YANG, TUNGSHENG, CUTHBERT, JOHN D, SCHROPE, DENNIS E
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A non-destructive double exposure method of examining photoresist features in section by, e.g., scanning electron microscopy, is described. The resist is exposed twice with one exposure defining integrated circuit features (5, 7, 9) and the other exposure defining an edge type feature (11) which overlaps an integrated circuit feature (5). Resist development produces a sectioned integrated circuit feature (17) which can be examined.