Laser probing for solid-state device

In laser probing of LSI, PICs' (photo-induced currents) are measured at the power source terminal of the LSI, under scanning of laser beam for a good LSI and a fault LSI, the measured PICs' are then superposingly displayed as red and green images, respectively; then faults of LSI are displ...

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Bibliographische Detailangaben
Hauptverfasser:	NOYORI, MASAHARU, SHIRAGASAWA, TSUYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	In laser probing of LSI, PICs' (photo-induced currents) are measured at the power source terminal of the LSI, under scanning of laser beam for a good LSI and a fault LSI, the measured PICs' are then superposingly displayed as red and green images, respectively; then faults of LSI are displayed as red spots in a yellow image made by superposition of green and red images.