Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor

A high density integrated circuit structure, for example a dynamic memory cell, is described which includes an active/passive device in combination with a capacitor structure. The capacitor structure is of the polysilicon-oxide-silicon type and is formed on the sidewalls of a mesa-shaped and dielect...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GOTH, GEORGE R, MALAVIYA, SHASHI D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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