Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor

A high density integrated circuit structure, for example a dynamic memory cell, is described which includes an active/passive device in combination with a capacitor structure. The capacitor structure is of the polysilicon-oxide-silicon type and is formed on the sidewalls of a mesa-shaped and dielectrically isolated region of silicon material resulting from the formation of an isolation trench in the silicon. The trench is filled with a plastic material, such as polyimide. The capacitor is formed by the isolated region of silicon material which functions as the first capacitor plate, a doped polysilicon layer provided on the vertical walls of the mesa serving as the second capacitor plate and a thin dielectric layer interposed between the two plates serving as the capacitor's dielectric. Since the polysilicon is wrapped around the periphery of the mesa as a coating on the vertical sidewalls thereof, it gives rise to a large storage capacitance without an increase in the cell size.