Infrared epitaxial detector structure and method of making same

Infrared epitaxial detector structure and method of making same

Successive layers of a II-VI ternary buffer layer and a II-VI ternary narrow-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.

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Bibliographische Detailangaben
Hauptverfasser: DINAN, JOHN H
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Successive layers of a II-VI ternary buffer layer and a II-VI ternary narrow-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.