Radiation-sensitive semiconductor device having reduced capacitance

Radiation-sensitive semiconductor device having reduced capacitance

The capacitance of a radiation-sensitive diode can be considerably reduced by giving it the form of a pn junction (4) between a first semiconductor region (4) and a layer-shaped semiconductor zone, which in operation is fully depleted. The speed of such a diode is favorably influenced by the choice...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HOEBERECHTS, ARTHUR M. E
Format: Patent
Sprache:eng
Schlagworte:
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The capacitance of a radiation-sensitive diode can be considerably reduced by giving it the form of a pn junction (4) between a first semiconductor region (4) and a layer-shaped semiconductor zone, which in operation is fully depleted. The speed of such a diode is favorably influenced by the choice or the shape of the geometry of the layer-shaped zone. When the latter is formed with parts decreasing in width of thickness, an electric field is produced in these parts which accelerates the transport of minority charge carriers to a central contact.