MOSFET with reduced bipolar effects

A MOSFET device comprises a semiconductor wafer which includes a drain region of first conductivity type contiguous with a wafer surface. A diffused body region of second conductivity type extends into the wafer from the wafer surface so as to form a body/drain PN junction which has a polygonally-shaped intercept at the wafer surface. A plurality of source regions of first conductivity type extends into the wafer from the wafer surface within the boundary of the body region. The source regions define a plurality of channel regions, a contact area, and at least one shunt region at the surface of the body region. Each shunt region extends from the contact area to one of the corners of the body/drain PN junction polygonal intercept. A source electrode contacts the body region contact area and each of the source regions adjacent thereto.