Process for forming pattern with negative resist using quinone diazide compound

A process for forming patterns with a negative type resist which comprises the steps of forming a negative type resist film made of quinone diazide oligomer having a polymerization degree of 10 or less, such as a quinone diazide sulfonic ester on a substrate, irradiating the resist film selectively with far ultraviolet rays having a wavelength of 180-300 nm to expose the above film, and then developing the film thus exposed by the use of a suitable developer such as a solution containing any one of an acetic ester, an alkyl ketone and cyclohexanone, and another process wherein the above described exposing step is carried out in such a manner that the quinone diazide sulfonic ester film is subjected to blanket exposure by means of ultraviolet rays having a longer wavelength than 300 nm, and then the resist film, thus exposed, is further subjected to selective exposure by means of far ultraviolet rays of 300 nm or less.