Semiconductor light emitter based on gallium nitride and process for manufacture thereof

PCT No. PCT/SU82/00002 Sec. 371 Date Sep. 1, 1983 Sec. 102(e) Date Sep. 1, 1983 PCT Filed Feb. 2, 1982 PCT Pub. No. WO83/02685 PCT Pub. Date Aug. 4, 1983.The semiconductor light emitter comprises a substrate (I) from a single-crystalline material transparent within the visible range of spectrum. Onto the substrate (I) there are deposited: a layer (2) of gallium nitride of the n-type conductivity and, above it, a layer (3) of gallium nitride alloyed with acceptor dopes. The emitter also comprises two metallic electrodes (5) and (6). Onto the electrode (5) a negative-polarity voltage is applied, onto the electrode (6)-a positive-polarity voltage. According to the present invention, over the layer (3) of gallium nitride alloyed with acceptor dopes a layer (4) of an insulating material is formed. The process for manufacturing the semiconductor light emitter comprises epitaxially growing, on a substrate of a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of the n-type conductivity; epitaxially growing, on this layer, a layer of gallium nitride alloyed by acceptor dopes, and forming two electrodes. According to the present invention, prior to the formation of the metallic electrodes on the layer of gallium nitride alloyed by acceptor dopes a layer of an insulating material is formed.