Sintered aluminum nitride semi-conductor device

A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.

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Bibliographische Detailangaben
Hauptverfasser:	MATSUSHITA, YASUO, OHKOSHI, TOKIO, OGIHARA, SATORU, TAKEDA, YUKIO, URA, MITSURU, ASAI, TADAMICHI, NAKAMURA, KOUSUKE, MAEDA, KUNIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF ALLOYS OR NON-FERROUS METALS TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.