Structure for inhibiting forward bias beta degradation
An emitter contact structure is disclosed for alleviating forward bias beta degradation in a bipolar transistor. The structure comprises emitter contact metallurgy which travels over a dielectric insulating layer having an area of increased thickness adjacent to the area of contact between the metal...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An emitter contact structure is disclosed for alleviating forward bias beta degradation in a bipolar transistor. The structure comprises emitter contact metallurgy which travels over a dielectric insulating layer having an area of increased thickness adjacent to the area of contact between the metallurgy and the emitter. |
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