Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate

Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate

A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said comp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KLINE, GERALD R, LAKIN, KENNETH M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Beschreibung
Zusammenfassung:A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.