Laser-induced production of nitrosyl fluoride for etching of semiconductor surfaces

Nitrosyl fluoride is prepared by laser-induced method wherein the nitrosyl fluoride is produced in situ or in close proximity to where it is used to etch semiconductor surfaces. A reaction mixture of a catalyst compound and a fluoro compound, wherein the catalyst compound is an oxide of nitrogen selected from the group of nitrogen oxide compounds consisting of NO, N2O, and NO2 and wherein the fluoro compound is selected from the group of fluoro compounds consisting of NF3 and N2F4, is irradiated with CO2 laser radiation to produce FNO. FNO reacts with an exposed silicon material to produce SiF4 and nitrogen oxide. Since the oxide is regenerated, it can be regarded as a catalyst which can be recovered and recycled. A production scheme for producing nitrosyl fluoride for etching is disclosed wherein the nitrosyl fluoride is produced directly in the laser reaction chamber by passing a CO2 laser beam through the reaction mixture. Alternately, the nitrosyl fluoride can also be produced in a side chamber and the gas flowed into an etching chamber.