Preparation of organic layers for oxygen etching

An improved method of etching a layer of organic material on a sustrate by oxygen plasma or oxygen reactive ion etching is disclosed. The surface of the layer is flood exposed with a plasma including a fluorine species for a time sufficient to significantly reduce the etch rate thereof in the oxygen...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	WHITE, LAWRENCE K, POPOV, METODI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	An improved method of etching a layer of organic material on a sustrate by oxygen plasma or oxygen reactive ion etching is disclosed. The surface of the layer is flood exposed with a plasma including a fluorine species for a time sufficient to significantly reduce the etch rate thereof in the oxygen etch. A patterned mask is then formed on the layer and the exposed portion etched. The subject method produces vertical walls in the etch profile with substantially no rounding of the top edge.