Magnetic domain device having a wide operational temperature range

Magnetic domain device having a wide operational temperature range

Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimet...

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Bibliographische Detailangaben
Hauptverfasser: NELSON, TERENCE J, LE CRAW, ROY C, LUTHER, LARS C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Zusammenfassung:Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimeters per second per oersted, and magnetic domain diameter is less than 3 micrometers. A specified operational temperature range may extend from -150 to 150 degrees C.; accordingly, such devices are particularly suitable for operation aboard satellites, e.g., in satellite communications systems.