Fabrication of gallium arsenide-germanium heteroface junction device

Fabrication of gallium arsenide-germanium heteroface junction device

Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the group Ia dopant in a Ge...

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Bibliographische Detailangaben
Hauptverfasser: RAHILLY, W. PATRICK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.