Metallization of selectively implanted AIII-BV compound semiconductors

Fabricating a semiconductor arrangement with a semiconductor body of an AIII-BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metall...

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Bibliographische Detailangaben
Hauptverfasser:	HUBER, JAKOB, PETTENPAUL, EWALD, WEIDLICH, HERBERT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Fabricating a semiconductor arrangement with a semiconductor body of an AIII-BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metallization is required.