Devices depending on garnet materials

Devices based on epitaxial garnet layers that exhibit a high magnetic anisotropy are disclosed. These garnet layers are produced by introducing a Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or a 5d electron orbital in the octahedral site of the garnet in conjunction with a typical anisotr...

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Bibliographische Detailangaben
Hauptverfasser:	BLANK, STUART L, LUTHER, LARS C, GYORGY, ERNST M, LECRAW, ROY C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSFORMERS
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Beschreibung
Zusammenfassung:	Devices based on epitaxial garnet layers that exhibit a high magnetic anisotropy are disclosed. These garnet layers are produced by introducing a Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or a 5d electron orbital in the octahedral site of the garnet in conjunction with a typical anisotropy producing combination on the dodecahedral site. The contribution to magnetic anisotropy due to the typical combination on the dodecahedral site and the appropriate ion in an octahedral site is complementary.