Graded bandgap rectifying semiconductor devices
A unipolar, rectifying semiconductor device is described. Rectification is produced by an asymmetric potential barrier created by a sawtooth-shaped composition profile of AlxGa1-xAs between layers of n-type GaAs. Single and multiple barriers, as well as doped and undoped barriers, show rectification...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A unipolar, rectifying semiconductor device is described. Rectification is produced by an asymmetric potential barrier created by a sawtooth-shaped composition profile of AlxGa1-xAs between layers of n-type GaAs. Single and multiple barriers, as well as doped and undoped barriers, show rectification. Also described is the incorporation of this type of device in an infrared detector, a hot electron transistor and mixer diodes. |
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