Phase-compensated integrated circuit

Compensation for an effect produced by variations in the base-widths of integrated circuit transistors occurring from batch to batch is obtained by including in each integrated circuit a resistor the resistance of which has an inverse relationship to the transistor base widths and generating a phase...

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Bibliographische Detailangaben
Hauptverfasser: THOMPSON, ROGER S
Format: Patent
Sprache:eng
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Zusammenfassung:Compensation for an effect produced by variations in the base-widths of integrated circuit transistors occurring from batch to batch is obtained by including in each integrated circuit a resistor the resistance of which has an inverse relationship to the transistor base widths and generating a phase shift in the signal path through the transistors, which phase shift depends on the value of the resistance in such manner that a relative phase advance is obtained with increasing values of the base widths. A control signal which depends on the value of a "base-under-emitter" resistor is produced at the output of a control signal generator circuit and is applied to an n-type island in which a "shallow-p" resistor is formed, thereby controlling the reverse bias of the island-resistor junction and hence the capacitance between the resistor and ground. The resistor and associated capacitance constitute a phase-advance network in a gyrator circuit including transistors the base widths of which are arranged to have an inverse relationship to the value of the base-under-emitter resistor by forming the transistors and the base-under-emitter resistor during the same doping steps. The value of the control signal is also arranged to depend on the doping level of the island by including a further resistor in the generator circuit, the value of which correllates with this doping level, thereby compensating for the effects which variations in this doping level would otherwise have on the phase compensation.