Advantageous garnet based devices
Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d...
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| creator | BLANK STUART L LUTHER LARS C GYORGY ERNST M LECRAW ROY C |
| description | Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or 5d electronic orbital in the octahedral site of the garnet. It is possible to produce epitaxial garnets having low damping constants, as determined by resonance line widths on the order of 100 Oe, and Ku's on the order of 300,000 ergs/cm3. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4337521A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4337521A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4337521A3</originalsourceid><addsrcrecordid>eNrjZFB0TClLzCtJTE_NLy1WSE8sykstUUhKLE5NUUhJLctMTi3mYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyalAPfGhwSbGxuamRoaOxoRVAAD9WCUJ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Advantageous garnet based devices</title><source>esp@cenet</source><creator>BLANK; STUART L ; LUTHER; LARS C ; GYORGY; ERNST M ; LECRAW; ROY C</creator><creatorcontrib>BLANK; STUART L ; LUTHER; LARS C ; GYORGY; ERNST M ; LECRAW; ROY C</creatorcontrib><description>Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or 5d electronic orbital in the octahedral site of the garnet. It is possible to produce epitaxial garnets having low damping constants, as determined by resonance line widths on the order of 100 Oe, and Ku's on the order of 300,000 ergs/cm3.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; MAGNETS ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; STATIC STORES ; TRANSFORMERS</subject><creationdate>1982</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820629&DB=EPODOC&CC=US&NR=4337521A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820629&DB=EPODOC&CC=US&NR=4337521A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BLANK; STUART L</creatorcontrib><creatorcontrib>LUTHER; LARS C</creatorcontrib><creatorcontrib>GYORGY; ERNST M</creatorcontrib><creatorcontrib>LECRAW; ROY C</creatorcontrib><title>Advantageous garnet based devices</title><description>Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or 5d electronic orbital in the octahedral site of the garnet. It is possible to produce epitaxial garnets having low damping constants, as determined by resonance line widths on the order of 100 Oe, and Ku's on the order of 300,000 ergs/cm3.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>MAGNETS</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>STATIC STORES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1982</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB0TClLzCtJTE_NLy1WSE8sykstUUhKLE5NUUhJLctMTi3mYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyalAPfGhwSbGxuamRoaOxoRVAAD9WCUJ</recordid><startdate>19820629</startdate><enddate>19820629</enddate><creator>BLANK; STUART L</creator><creator>LUTHER; LARS C</creator><creator>GYORGY; ERNST M</creator><creator>LECRAW; ROY C</creator><scope>EVB</scope></search><sort><creationdate>19820629</creationdate><title>Advantageous garnet based devices</title><author>BLANK; STUART L ; LUTHER; LARS C ; GYORGY; ERNST M ; LECRAW; ROY C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4337521A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1982</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>MAGNETS</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>STATIC STORES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>BLANK; STUART L</creatorcontrib><creatorcontrib>LUTHER; LARS C</creatorcontrib><creatorcontrib>GYORGY; ERNST M</creatorcontrib><creatorcontrib>LECRAW; ROY C</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BLANK; STUART L</au><au>LUTHER; LARS C</au><au>GYORGY; ERNST M</au><au>LECRAW; ROY C</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Advantageous garnet based devices</title><date>1982-06-29</date><risdate>1982</risdate><abstract>Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or 5d electronic orbital in the octahedral site of the garnet. It is possible to produce epitaxial garnets having low damping constants, as determined by resonance line widths on the order of 100 Oe, and Ku's on the order of 300,000 ergs/cm3.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS |
| title | Advantageous garnet based devices |
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