Advantageous garnet based devices

Advantageous garnet based devices

Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d...

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Bibliographische Detailangaben
Hauptverfasser: BLANK, STUART L, LUTHER, LARS C, GYORGY, ERNST M, LECRAW, ROY C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Beschreibung
Zusammenfassung:Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co2+ or a species with 1, 2, 4, or 5 electrons in a 4d or 5d electronic orbital in the octahedral site of the garnet. It is possible to produce epitaxial garnets having low damping constants, as determined by resonance line widths on the order of 100 Oe, and Ku's on the order of 300,000 ergs/cm3.