Methods and apparatus for improving an RF excited reactive gas plasma

Methods and apparatus for improving an RF excited reactive gas plasma

The quality of a plasma etching process is improved by applying a DC potential (28') to one of the energizing electrodes (12') in the reaction chamber (11').The DC potential withdraws a small current from the plasma which causes the reaction to produce a uniform, controllable self-bia...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUEYEL, BIROL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The quality of a plasma etching process is improved by applying a DC potential (28') to one of the energizing electrodes (12') in the reaction chamber (11').The DC potential withdraws a small current from the plasma which causes the reaction to produce a uniform, controllable self-bias on the workpiece placed on the opposite (or second) electrode.