Method of manufacturing semiconductor bodies composed of amorphous silicon

Semiconductor bodies comprised of amorphous silicon are produced by sequentially depositing a plurality of amorphous silicon layers on a heat-resistant substrate by glow discharge in a silicon halide atmosphere at low pressures and low substrate temperatures, with each layer being hydrogenated with...

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Bibliographische Detailangaben
Hauptverfasser: GRABMAIER, JOSEF, PLAETTNER, ROLF, KRUEHLER, WOLFGANG
Format: Patent
Sprache:eng
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Zusammenfassung:Semiconductor bodies comprised of amorphous silicon are produced by sequentially depositing a plurality of amorphous silicon layers on a heat-resistant substrate by glow discharge in a silicon halide atmosphere at low pressures and low substrate temperatures, with each layer being hydrogenated with atomic hydrogen before deposition of the next subsequent layer. The semiconductor bodies thus produced are useful as basic or raw materials for fabricating solar cells.