Reactant gas flow structure for a low pressure chemical vapor deposition system

A structure for a low-pressure chemical vapor deposition system which achieves greater uniformity of deposition. The structure includes injection means designed to provide more uniform distribution of the reactant gases injected into the system, as well as means to control the gas flow across the su...

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Bibliographische Detailangaben
1. Verfasser:	HOCHBERG, ARTHUR K
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A structure for a low-pressure chemical vapor deposition system which achieves greater uniformity of deposition. The structure includes injection means designed to provide more uniform distribution of the reactant gases injected into the system, as well as means to control the gas flow across the surfaces of the respective wafers and then the exhaust of those gases from the system. To this end, plenums which run the length of the deposition chamber beneath or to the side of the wafers are provided with openings arranged in a non-uniform manner to achieve this uniform injection. Furthermore, the wafer support or boat is provided with means to disperse concentrations of the reactant gases so as to provide more uniformity of the gas flow across the surfaces of the wafers.