Method of diffusing aluminum into monocrystalline silicon

Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250 DEG C....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ROSNOWSKI, WOJCIECH, NEILSON, JOHN M S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!