Method of diffusing aluminum into monocrystalline silicon

Method of diffusing aluminum into monocrystalline silicon

Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250 DEG C....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ROSNOWSKI, WOJCIECH, NEILSON, JOHN M S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250 DEG C., depositing a silicon overlayer over said aluminum layer at a temperature less than about 250 DEG C. and raising the temperature of said structure to between 900 DEG C. and 1300 DEG C. to cause the aluminum to diffuse into said monocrystalline silicon.