Monolithic imager for near-IR

A monolithic imager utilizing a plurality of detector cells is formed on a common intrinsic substrate. Backside illumination in the near-IR region generates hole-electron pairs in the intrinsic material which may be depleted throughout its thickness by CCD-range voltages applied by the imager's readout structure to a over-lying, thinly doped epitaxial layer. Minority carriers migrate toward a collection node which is formed in the epitaxial layer (and protrudes into the substrate), accumulating in an inversion layer at the surface of the epitaxial layer. The accumulated charge is advanced to an output diffusion in the epitaxial layer by means of a readout system which provides semi-random addressing of the transfer gate electrodes of the individual detector cells.