Microwave power limiter comprising a single-gate FET

A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input...

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Hauptverfasser: TURSKI, ZYGMOND, ROSEN, ARYE, WOLKSTEIN, HERBERT J, MAWHINNEY, DANIEL D
Format: Patent
Sprache:eng
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Zusammenfassung:A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.