Radiation-hardened transistor amplifiers
The transient photo-currents generated in the collector-base junction of an amplifier transistor responsive to transient ionizing radiation are counteracted by those similarly generated in an auxiliary p-n semiconductor junction in inverse-parallel connection with the emitter base junction of the am...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The transient photo-currents generated in the collector-base junction of an amplifier transistor responsive to transient ionizing radiation are counteracted by those similarly generated in an auxiliary p-n semiconductor junction in inverse-parallel connection with the emitter base junction of the amplifier transistor. To provide more perfect counteraction of these photo-currents, this auxiliary semiconductor junction, operated in reverse-bias, is matched in characteristics with the collector-base junction of the amplifier transistor, and the base-to-collector potential of the amplifier transistor is arranged to be substantially the same as the reverse-bias potential across the auxiliary semiconductor junction. |
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