Memory transistor
{PG,1 A memory transistor in which a photovoltaic-ferroelectric element is connected between the gate and source of a field effect transistor. The element stores a remanent polarization in a direction corresponding to the polarity of a voltage to be applied to the transistor, and when the element is...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | {PG,1 A memory transistor in which a photovoltaic-ferroelectric element is connected between the gate and source of a field effect transistor. The element stores a remanent polarization in a direction corresponding to the polarity of a voltage to be applied to the transistor, and when the element is illuminated the voltage is generated and is applied. A restorable cross-coupled flip-flop in which memory information is stored in a pair of photovoltaic-ferroelectric elements. If power is lost, the elements are illuminated and the information which was lost from the memory is restored. |
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