Selective dry etching of substrates

Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.

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Bibliographische Detailangaben
Hauptverfasser:	SCHAIBLE, PAUL M, ZIELINSKI, LAURA B, SCHWARTZ, GERALDINE C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.